RAMAN-SCATTERING FROM GAAS-INXGA1-XAS STRAINED-LAYER SUPERLATTICES

被引：23

作者：

NAKAYAMA, M

KUBOTA, K

KATO, H

SANO, N

机构：

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 51卷 / 05期

关键词：

D O I：

10.1016/0038-1098(84)90702-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：343 / 345

页数：3

共 6 条

[1] DIRECT OBSERVATION OF LATTICE DISTORTION IN A STRAINED-LAYER SUPER-LATTICE [J].

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HOLONYAK, N ;

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DIETZE, WT ;

LEWIS, CR .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :863-865

[2] OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J].

EVANS, DJ ;

USHIODA, S .

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[3] ELECTRON MOBILITIES IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPER-LATTICES [J].

FRITZ, IJ ;

DAWSON, LR ;

ZIPPERIAN, TE .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :846-848

[4] CHARACTERIZATION OF GAAS-ALAS SUPER-LATTICES BY LASER-RAMAN SPECTROSCOPY [J].

KUBOTA, K ;

NAKAYAMA, M ;

KATOH, H ;

SANO, N .

SOLID STATE COMMUNICATIONS, 1984, 49 (02) :157-159

[5] A GAASXP1-X-GAP STRAINED-LAYER SUPER-LATTICE [J].

OSBOURN, GC ;

BIEFELD, RM ;

GOURLEY, PL .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :172-174

[6] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J].

OSBOURN, GC .

PHYSICAL REVIEW B, 1983, 27 (08) :5126-5128

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