OPTICALLY INDUCED ELECTROMAGNETIC-RADIATION FROM SEMICONDUCTOR SURFACES

被引：81

作者：

ZHANG, XC ^{[1
]}

DARROW, JT ^{[1
]}

HU, BB ^{[1
]}

AUSTON, DH ^{[1
]}

SCHMIDT, MT ^{[1
]}

THAM, P ^{[1
]}

YANG, ES ^{[1
]}

机构：

[1] COLUMBIA UNIV,CTR TELECOMMUN RES,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 22期

关键词：

D O I：

10.1063/1.102952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.

引用

页码：2228 / 2230

页数：3

共 8 条

[1] SUBPICOSECOND ELECTROMAGNETIC PULSES FROM LARGE-APERTURE PHOTOCONDUCTING ANTENNAS
DARROW, JT
HU, BB
ZHANG, XC
AUSTON, DH
[J]. OPTICS LETTERS, 1990, 15 (06) : 323 - 325
[2] TERAHERTZ BEAMS
FATTINGER, C
GRISCHKOWSKY, D
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (06) : 490 - 492
[3] HU BB, 1990, APPL PHYS LETT, V56, P5
[4] PANKOVE JI, 1975, OPTICAL PROCESSES SE, pCH18
[5] SUBPICOSECOND PHOTOCONDUCTING DIPOLE ANTENNAS
SMITH, PR
AUSTON, DH
NUSS, MC
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) : 255 - 260
[6] SZE SM, 1981, PHYSICS SEMICONDUCTO, P248
[7] PICOSECOND RESPONSE OF PHOTOEXCITED GAAS IN A UNIFORM ELECTRIC-FIELD BY MONTE-CARLO DYNAMICS
WYSIN, GM
SMITH, DL
REDONDO, A
[J]. PHYSICAL REVIEW B, 1988, 38 (17): : 12514 - 12524
[8] GENERATION OF FEMTOSECOND ELECTROMAGNETIC PULSES FROM SEMICONDUCTOR SURFACES
ZHANG, XC
HU, BB
DARROW, JT
AUSTON, DH
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (11) : 1011 - 1013

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