Measurements of reverse and forward bias absorption and gain spectra in semiconductor laser material

被引：15

作者：

McDougall, SD

Ironside, CN

机构：

[1] Department of Electronic and Electrical Engineering, University of Glasgow, Glasgow

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 25期

关键词：

semiconductor junction lasers; semiconductor quantum wells;

D O I：

10.1049/el:19951483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple technique for measuring absorption and gain spectra under reverse and forward bias in a two section semiconductor laser is described. Results are presented for an AlGaAs/GaAs multiquantum well laser. For reverse bias, exciton broadening and shifting are observed; and for forward bias, relative gain spectra are measured.

引用

收藏

页码：2179 / 2181

页数：3

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