PHOTOINDUCED MID-GAP ABSORPTION AND TRANSIENT PHOTOCONDUCTIVITY IN THE A-SI-H SYSTEM

被引：4

作者：

KIRBY, PB

PAUL, W

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(83)90618-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：453 / 456

页数：4

共 5 条

[1] KIRBY PB, UNPUB
[2] KIRBY PB, UNPUB PHYS REV B, V15
[3] TRANSIENT PHOTOCONDUCTIVITY AND PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS
ORENSTEIN, J
KASTNER, MA
VANINOV, V
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01): : 23 - 62
[4] TRAPPING PARAMETERS OF DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON
STREET, RA
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1060 - 1062
[5] ROLE OF DANGLING-BOND DEFECTS IN EARLY RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
WAKE, DR
AMER, NM
[J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2598 - 2601