DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF DEFECTS IN MEGAELECTRON-VOLT GERMANIUM ION-IMPLANTED SILICON

被引：4

作者：

JAGADISH, C

SVENSSON, BG

HAUSER, N

WILLIAMS, JS

机构：

[1] Department of Electronic Materials Engineering, Australian National University, Canberra

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90062-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Defects generated in megaelectronvolt germanium ion implanted silicon were studied by means of deep level transient spectroscopy. Four electron traps at 0.18, 0.23, 0.35 and 0.43 eV below the conduction band edge E(c) were observed. The generation rate of these levels as a function of dose was found to be linear up to a dose of 1.6 x 10(9) cm-2. Depth concentration profiles of these levels were found to be narrower in shape when compared with the vacancy profile estimated from theoretical calculations, and this is attributed to surface-enhanced recombination.

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页码：173 / 175

页数：3

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