HIGH-TEMPERATURE EXCITONS AND ENHANCED ELECTROABSORPTION IN INGAAS/INALAS MULTIPLE QUANTUM WELLS

被引：20

作者：

WAKITA, K

KAWAMURA, Y

YOSHIKUNI, Y

ASAHI, H

机构：

[1] NTT, Electrical Communication Lab,, Atsugi, Jpn, NTT, Electrical Communication Lab, Atsugi, Jpn

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 13期

关键词：

SEMICONDUCTOR MATERIALS;

D O I：

10.1049/el:19850406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sharp heavy-hole and light-hole excitons are clearly observed in InGaAs/InAlAs multiple-quantum-well (MQW) structures at temperatures ranging from minus 190 degree C to 70 degree C. The halfwidth of the heavy-hole exciton line is as narrow as 6. 2 mev at room temperature. InGaAs/InAlAs MQWs are prepared in a PIN doped configuration by molecular beam epitaxy. An enhanced electroabsorption effect is also clearly observed in long-wavelength-region MQWs.

引用

页码：574 / 576

页数：3

共 7 条

[1] ELECTRO-ABSORPTION BY STARK-EFFECT ON ROOM-TEMPERATURE EXCITONS IN GAAS/GAALAS MULTIPLE QUANTUM WELL STRUCTURES [J].