AN IMPROVED AUGE OHMIC CONTACT TO N-GAAS

[1] DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 430 - 435

[2] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[3] BERGER HH, 1969, DIGEST TECH PAP ISSC, P160

[4] ALLOYED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807

[5] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 141 - &

[6] CHRISTOU A, 1977, 6TH P BIENN CORN EL, P169

[7] HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[8] MURRMANN H, 1969, DIGEST TECH PAP ISSC, P162

[9] ALLOYING BEHAVIOR OF NI-AU-GE FILMS ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 406 - 412

[10] METAL-N-TYPE SEMICONDUCTOR OHMIC CONTACT WITH A SHALLOW N+ SURFACE-LAYER [J]. SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1133 - 1138

[1] DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 430 - 435

[2] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[3] BERGER HH, 1969, DIGEST TECH PAP ISSC, P160

[4] ALLOYED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807

[5] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 141 - &

[6] CHRISTOU A, 1977, 6TH P BIENN CORN EL, P169

[7] HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[8] MURRMANN H, 1969, DIGEST TECH PAP ISSC, P162

[9] ALLOYING BEHAVIOR OF NI-AU-GE FILMS ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 406 - 412

[10] METAL-N-TYPE SEMICONDUCTOR OHMIC CONTACT WITH A SHALLOW N+ SURFACE-LAYER [J]. SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1133 - 1138