COMMENT ON CORRELATION EFFECTS IN HOPPING CONDUCTION

被引:20
作者
KNOTEK, ML
POLLAK, M
机构
[1] SANDIA LABS,ALBUQUERQUE,NM 87115
[2] UNIV CALIF RIVERSIDE,DEPT PHYS,RIVERSIDE,CA 92502
来源
PHILOSOPHICAL MAGAZINE | 1977年 / 35卷 / 04期
关键词
D O I
10.1080/14786437708232653
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1133 / 1136
页数:4
相关论文
共 22 条
  • [11] TEMPERATURE AND THICKNESS DEPENDENCE OF LOW-TEMPERATURE TRANSPORT IN AMORPHOUS SILICON THIN-FILMS - COMPARISON TO AMORPHOUS-GERMANIUM
    KNOTEK, ML
    [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (11) : 1431 - 1433
  • [12] KNOTEK ML, 1972, J NONCRYST SOLIDS, V8, P505
  • [13] ANDERSON TRANSITION
    MOTT, N
    PEPPER, M
    POLLITT, S
    WALLIS, RH
    ADKINS, CJ
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1975, 345 (1641) : 169 - 205
  • [14] Mott N. F., 1968, Journal of Non-Crystalline Solids, V1, P1, DOI 10.1016/0022-3093(68)90002-1
  • [15] EFFECT OF ELECTRON INTERACTION ON VARIABLE-RANGE HOPPING
    MOTT, NF
    [J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (04): : 643 - 645
  • [16] VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER
    PEPPER, M
    POLLITT, S
    ADKINS, CJ
    OAKLEY, RE
    [J]. PHYSICS LETTERS A, 1974, A 47 (01) : 71 - 72
  • [17] DIELECTRIC THEORY FOR AMORPHOUS SEMICONDUCTORS
    POLLAK, M
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 325 (1562): : 383 - &
  • [18] DC CONDUCTIVITY OF AMORPHOUS GERMANIUM AND STRUCTURE OF PSEUDOGAP
    POLLAK, M
    KNOTEK, ML
    KURTZMAN, H
    GLICK, H
    [J]. PHYSICAL REVIEW LETTERS, 1973, 30 (18) : 856 - 859
  • [19] Pollak M, 1970, DISCUSS FARADAY SOC, V50, P13
  • [20] SHLIMAK IS, 1972, JETP LETT-USSR, V15, P20