HIGH-POWER, HIGH-BRIGHTNESS, PHASE-LOCKED BROAD-STRIPE DIODE-LASERS

被引：3

作者：

LINDSTROM, C ^{[1
]}

JOSEFSSON, A ^{[1
]}

FRANKLIN, G ^{[1
]}

MILTON, M ^{[1
]}

NYBERG, C ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,S-41296 GOTHENBURG,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.100397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：555 / 556

页数：2

共 8 条

[1] CARRIER TRAPPING IN SINGLE QUANTUM-WELLS WITH DIFFERENT CONFINEMENT STRUCTURES [J].

FELDMANN, J ;

PETER, G ;

GOBEL, EO ;

LEO, K ;

POLLAND, HJ ;

PLOOG, K ;

FUJIWARA, K ;

NAKAYAMA, T .

APPLIED PHYSICS LETTERS, 1987, 51 (04) :226-228

[2]

HARNAGEL G, 1986, LASERS APPL JUN, P135

[3] LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPE [J].

HERSEE, S ;

BALDY, M ;

ASSENAT, P ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1982, 18 (14) :618-620

[4] ONE WATT CW VISIBLE SINGLE-QUANTUM-WELL LASERS [J].

LINDSTROM, C ;

BURNHAM, RD ;

SCIFRES, DR ;

PAOLI, TL ;

STREIFER, W .

ELECTRONICS LETTERS, 1983, 19 (03) :80-81

[5]

LINDSTROM C, 1983, CLEO 83, P131

[6] HIGH-POWER (710 MW CW) SINGLE-LOBE OPERATION OF BROAD AREA ALGAAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SAKAMOTO, M ;

KATO, Y .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :869-870

[7] HIGH-POWER (2.1 W) 10-STRIPE ALGAAS LASER ARRAYS WITH SI DISORDERED FACET WINDOWS [J].

THORNTON, RL ;

WELCH, DF ;

BURNHAM, RD ;

PAOLI, TL ;

CROSS, PS .

APPLIED PHYSICS LETTERS, 1986, 49 (23) :1572-1574

[8] PERFORMANCE-CHARACTERISTICS OF HIGH-BRIGHTNESS, CW, DIODE-LASER ARRAYS [J].

WELCH, DF ;

DEVITO, M ;

CARDINAL, M ;

ABRAHAM, M ;

KUNG, H ;

HARNAGEL, G ;

CROSS, P ;

SCIFRES, D ;

STREIFER, W .

ELECTRONICS LETTERS, 1987, 23 (17) :892-894

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