EXTREME G-FACTOR ANISOTROPY INDUCED BY STRAIN

被引：22

作者：

LIN, SY

WEI, HP

TSUI, DC

KLEM, JF

ALLEN, SJ

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[2] BELL COMMUN RES INC,RED BANK,NJ 08544

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.43.12110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetotransport measurements as a function of B-field orientation are studied on p-type strained-layer (001) GaAs/In0.20Ga0.80As/GaAs quantum wells at temperatures from 4.2 to 0.4 K. It is shown that the two-dimensional holes are derived from the m(j) = +/- 3/2 subbands and that the Zeeman splitting between the m(j) = 3/2 and m(j) = -3/2 states of the same Landau level depends on the components of B perpendicular to the strained layer and not the total B. This g-factor anisotropy is shown to be a consequence of the large unaxial strain in the In0.20Ga0.80As layer.

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页码：12110 / 12113

页数：4

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