OPTIMAL 2ND-ORDER SMALL-SIGNAL MODEL FOR LONG-CHANNEL AND SHORT-CHANNEL 3-TERMINAL MOSFET/MODFET WAVE-EQUATION

被引：3

作者：

KANG, SC ^{[1
]}

ROBLIN, P ^{[1
]}

机构：

[1] OHIO STATE UNIV, DEPT ELECT ENGN, COLUMBUS, OH 43210 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 08期

关键词：

D O I：

10.1109/16.144683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optimal second-order small-signal model is developed for the long-channel three-terminal MOSFET/MODFET wave equation. The resulting Y parameters admit the correct fourth-order frequency power series expansion and exhibit a graceful degradation at high frequencies compared to a previously reported second-order model. This model can be integrated in the velocity-saturated MOSFET/MODFET equivalent circuit and is demonstrated to greatly improve the frequency range of validity of this short-channel model. The excellent results obtained demonstrate the validity of both the equivalent-circuit synthesis procedure and the correctness of the equivalent circuit proposed.

引用

页码：1909 / 1915

页数：7

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