UNIFIED NONQUASI-STATIC MODELING OF THE LONG-CHANNEL 4-TERMINAL MOSFET FOR LARGE-SIGNAL AND SMALL-SIGNAL ANALYSES IN ALL OPERATING REGIMES

被引：23

作者：

CHAI, KW ^{[1
]}

PAULOS, JJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27695

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期

关键词：

D O I：

10.1109/16.43675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2513 / 2520

页数：8

共 21 条

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[4]

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[5]

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[6]

CONILOGUE R, 1983, THESIS U CALIFORNIA

[7]

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[8] SMALL-SIGNAL HIGH-FREQUENCY EQUIVALENT CIRCUIT FOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].

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TROFIMENKOFF, FN .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1969, 116 (05) :699-+

[9] A NON-QUASI-STATIC ANALYSIS OF THE TRANSIENT-BEHAVIOR OF THE LONG-CHANNEL MOST VALID IN ALL REGIONS OF OPERATION [J].

MANCINI, P ;

TURCHETTI, C ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :325-334

[10]

MEYER JE, 1971, RCA REV, V32, P42

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