SMALL-SIGNAL HIGH-FREQUENCY EQUIVALENT CIRCUIT FOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：19

作者：

HASLETT, JW

TROFIMENKOFF, FN

机构：

来源：

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON | 1969年 / 116卷 / 05期

关键词：

D O I：

10.1049/piee.1969.0140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：699 / +

页数：1

共 11 条

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[9] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

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[10] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

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