A NON-QUASI-STATIC ANALYSIS OF THE TRANSIENT-BEHAVIOR OF THE LONG-CHANNEL MOST VALID IN ALL REGIONS OF OPERATION

被引：20

作者：

MANCINI, P ^{[1
]}

TURCHETTI, C ^{[1
]}

MASETTI, G ^{[1
]}

机构：

[1] UNIV ANCONA,DEPT ELECTR,I-60100 ANCONA,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：325 / 334

页数：10

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[7]

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[9] TRANSIENT ANALYSIS OF MOS-TRANSISTORS [J].

OH, SY ;

WARD, DE ;

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[10]

OH SY, 1981, G20110 STANF U REP

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