LARGE-SIGNAL AND SMALL-SIGNAL CHANNEL TRANSIT-TIME DELAYS IN LONG-CHANNEL MOS-TRANSISTORS

被引：8

作者：

MIKAMI, Y ^{[1
]}

THOMAS, RE ^{[1
]}

机构：

[1] CARLETON UNIV, DEPT ELECTR, OTTAWA K1S 5B6, ONTARIO, CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 02期

关键词：

D O I：

10.1109/T-ED.1977.18687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：99 / 107

页数：9

共 12 条

[1]

BOOTHROYD AR, 1974, CHARGE COUPLED DEVIC

[2] INTEGRATED MOS DISTRIBUTED RC-NETWORKS FOR FREQUENCY SELECTIVE CIRCUITS [J].

BOZIC, SM ;

MILLER, CA ;

SALAWU, RI .

MICROELECTRONICS AND RELIABILITY, 1973, 12 (02) :139-144

[3]

BURNS JR, 1967, RCA REV, V28, P385

[4]

BURNS JR, 1969, RCA REV, V30, P15

[5] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J].

COLMAN, D ;

BATE, RT ;

MIZE, JP .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :1923-&

[6]

Goldman S., 1949, TRANSFORMATION CALCU

[7] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J].

IHANTOLA, HKJ ;

MOLL, JL .

SOLID-STATE ELECTRONICS, 1964, 7 (06) :423-430

[8]

MIKAMI Y, 1974, THESIS CARLETON U

[9] TRANSIENT RESPONSE OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J].

OREILLY, TJ .

SOLID-STATE ELECTRONICS, 1965, 8 (12) :947-+

[10] EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

SAH, CT ;

PAO, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (04) :393-+

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