EVIDENCE FOR PRECURSOR-MEDIATED CL2 ETCHING OF GAAS(110) - EFFECT OF SURFACE-TEMPERATURE AND INCIDENT TRANSLATIONAL ENERGY ON THE REACTION PROBABILITY

被引:32
作者
DELOUISE, LA
机构
[1] Xerox Webster Research Center, 114-4ID, Webster, New York 14580
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 03期
关键词
D O I
10.1116/1.577495
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Angle-resolved supersonic molecular beam scattering and time-of-flight techniques are used to probe the dynamics of the Cl2/GaAs{110} thermal etching reaction by measuring the polar angle and velocity distributions of the unreacted Cl2 and of the primary etch product GaCl3. Measurements of the reaction probability versus incident Cl2 translational energy reveal that the reaction mechanism is precursor mediated and that the weakly bound molecular (Cl2)ads species is a key reaction intermediate. At high surface temperatures (approximately 550 K) the angle distribution of the GaCl3 product species is consistent with the absence of an activation barrier to desorption and from x-ray photoelectron spectroscopy measurements the GaAs{110} surface appears to etch stoichiometrically.
引用
收藏
页码:1732 / 1736
页数:5
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