EFFECT OF PHOSPHORUS IN SIO2 AS SHOWN BY INFRARED SPECTROSCOPY (SEMICONDUCTOR DEVICE PASSIVICATION - GLASSES E)

被引：21

作者：

PLISKIN, WA

机构：

来源：

APPLIED PHYSICS LETTERS | 1965年 / 7卷 / 06期

关键词：

D O I：

10.1063/1.1754355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：158 / &

共 9 条

[1]

FLORINSKAYA VA, 1953, DOKL AKAD NAUK SSSR+, V91, P59

[2] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J].

KERR, DR ;

LOGAN, JS ;

BURKHARDT, PJ ;

PLISKIN, WA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :376-&

[3]

KOLESOVA VA, 1959, OPT SPECTROSC, V6, P20

[4] The infra-red reflection spectrum of silicates. II [J].

Matossi, Frank ;

Krueger, Hans .

ZEITSCHRIFT FUR PHYSIK, 1936, 99 (1-2) :1-23

[5] EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J].

PLISKIN, WA ;

GNALL, RP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :872-873

[6]

PLISKIN WA, TO BE PUBLISHED

[7] ELECTROCHEMICAL PHENOMENA IN THIN FILMS OF SILICON DIOXIDE ON SILICON [J].

SERAPHIM, DP ;

BRENNEMANN, AE ;

FRIEDMAN, HL ;

DHEURLE, FM .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :400-+

[8] SPACE-CHARGE MODEL FOR SURFACE POTENTIAL SHIFTS IN SILICON PASSIVATED WITH THIN INSULATING LAYERS [J].

THOMAS, JE ;

YOUNG, DR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :368-+

[9]

YAMIN M, 1965, ELECTROCHEMICAL SOCI

← 1 →