ABINITIO THEORY OF POLAR SEMICONDUCTOR SURFACES .1. METHODOLOGY AND THE (2X2) RECONSTRUCTIONS OF GAAS(111)

被引：203

作者：

KAXIRAS, E ^{[1
]}

BARYAM, Y ^{[1
]}

JOANNOPOULOS, JD ^{[1
]}

PANDEY, KC ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.35.9625

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9625 / 9635

页数：11

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