ZERO-TEMPERATURE-COEFFICIENT SAW DEVICES ON ALN EPITAXIAL-FILMS

[1] EFFECT OF TEMPERATURE AND DOPPLER-SHIFT ON PERFORMANCE OF ELASTIC SURFACE-WAVE ENCODERS AND DECODERS [J]. IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1972, SU19 (03): : 357 - &

[2] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND X-RAY STUDIES OF A1N FILMS GROWN ON SI(111) AND SI(001) BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1984, 122 (03) : 259 - 270

[3] Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163

[4] HELLWEGE KH, 1962, LANDOLTBORNSTEIN NUM

[5] HURLBURT DH, HETEROEPITAXIAL SEMI, P174

[6] Kagiwada R. S., 1978, 1978 Ultrasonics Symposium Proceedings, P598, DOI 10.1109/ULTSYM.1978.197110

[7] GROWTH MORPHOLOGY AND SURFACE-ACOUSTIC-WAVE MEASUREMENTS OF AIN FILMS ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3703 - 3706

[8] LIU JK, 1975, 1975 ULTR S P, P234

[9] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1864 - +

[10] ELECTRONIC CONDUCTION IN EPITAXIAL ALUMINUM NITRIDE FILMS ON SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05): : 728 - 730

[1] EFFECT OF TEMPERATURE AND DOPPLER-SHIFT ON PERFORMANCE OF ELASTIC SURFACE-WAVE ENCODERS AND DECODERS [J]. IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1972, SU19 (03): : 357 - &

[2] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND X-RAY STUDIES OF A1N FILMS GROWN ON SI(111) AND SI(001) BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1984, 122 (03) : 259 - 270

[3] Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163

[4] HELLWEGE KH, 1962, LANDOLTBORNSTEIN NUM

[5] HURLBURT DH, HETEROEPITAXIAL SEMI, P174

[6] Kagiwada R. S., 1978, 1978 Ultrasonics Symposium Proceedings, P598, DOI 10.1109/ULTSYM.1978.197110

[7] GROWTH MORPHOLOGY AND SURFACE-ACOUSTIC-WAVE MEASUREMENTS OF AIN FILMS ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3703 - 3706

[8] LIU JK, 1975, 1975 ULTR S P, P234

[9] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1864 - +

[10] ELECTRONIC CONDUCTION IN EPITAXIAL ALUMINUM NITRIDE FILMS ON SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05): : 728 - 730