SEMIMETAL-TO-SEMICONDUCTOR TRANSITION IN BISMUTH THIN-FILMS - REPLY

被引：35

作者：

HOFFMAN, CA ^{[1
]}

MEYER, JR ^{[1
]}

BARTOLI, FJ ^{[1
]}

DIVENERE, A ^{[1
]}

YI, XJ ^{[1
]}

HOU, CL ^{[1
]}

WANG, HC ^{[1
]}

KETTERSON, JB ^{[1
]}

WONG, GK ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT PHYS & ASTRON,EVANSTON,IL 60208

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.51.5535

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The suppression of intrinsic carrier generation does not in itself constitute proof that a semimetal-to-semiconductor transition has occurred. However, we present a realistic statistical analysis that demonstrates that the Bi film data do in fact imply the opening of a 56-meV energy gap in the thinnest sample (200) studied. The standard vanishing-wave-function model accounts for the experimental observations, whereas the alternative vanishing-gradient model yields results that are inherently inconsistent with the data. © 1995 The American Physical Society.

引用

页码：5535 / 5537

页数：3

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