ALLOTAXIAL GROWTH OF SINGLE-CRYSTAL SI/COSI2/SI(100) HETEROSTRUCTURES

Monocrystalline buried layers of CoSi2 in a Si(100) matrix have been grown by a new technique, named allotaxy. This is a two-step process, including the epitaxial growth of the Si host matrix with CoSi2 precipitates and a high-temperature anneal. Si/CoSi2/Si(100) heterostructures of different thicknesses were produced using various growth parameters and annealing temperatures and were characterized by RBS, ion channeling, TEM, X-ray diffraction and resistivity measurements. The quality of the produced epitaxial buried CoSi2 layers is comparable with the best layers produced by ion-beam synthesis.