CHANGE IN SCANNING TUNNELING MICROSCOPE (STM) TIP SHAPE DURING NANOFABRICATION

被引：11

作者：

YOKOI, N ^{[1
]}

UEDA, S ^{[1
]}

NAMBA, S ^{[1
]}

TAKAI, M ^{[1
]}

机构：

[1] OSAKA UNIV, EXTREME MAT RES CTR, TOYONAKA, OSAKA 560, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 1A-B期

关键词：

SCANNING TUNNELING MICROSCOPE (STM); NANOFABRICATION; GRAPHITE; TIP;

D O I：

10.1143/JJAP.32.L129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of voltage pulses-upon scanning tunneling microscope (STM) tips during nanofabrication has been studied. The tips were observed by scanning electron microscopy (SEM) before and after application of voltage pulses with various pulse amplitudes, pulse widths and tunneling gap widths, and were found to be damaged by highly concentrated current flowing through the tunneling gap, which resulted in melt and/or evaporation of tips.

引用

页码：L129 / L131

页数：3

共 6 条

[1] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].

BINNING, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61

[2] PATTERN GENERATION ON SEMICONDUCTOR SURFACES BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].

DAGATA, JA ;

SCHNEIR, J ;

HARARY, HH ;

BENNETT, J ;

TSENG, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :1384-1388

[3] FIELD-INDUCED NANOMETER-SCALE TO ATOMIC-SCALE MANIPULATION OF SILICON SURFACES WITH THE STM [J].

LYO, IW ;

AVOURIS, P .

SCIENCE, 1991, 253 (5016) :173-176

[4] MAKING A MONOLAYER HOLE IN A GRAPHITE SURFACE BY MEANS OF A SCANNING TUNNELING MICROSCOPE [J].

MIZUTANI, W ;

INUKAI, J ;

ONO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (05) :L815-L817

[5]

WHITE CW, 1980, LASER ELECTRON BEAM, P17

[6] NANOFABRICATION WITH A SCANNING TUNNELING MICROSCOPE [J].

YAU, ST ;

SALTZ, D ;

WRIEKAT, A ;

NAYFEH, MH .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :2970-2974

← 1 →