TEMPERATURE PROFILES IN A 2-COMPONENT HETEROGENEOUS SYSTEM HEATED WITH A CW LASER

被引：3

作者：

BHATTACHARYA, PK

GUPTA, SK

WAGH, AG

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1982年 / 63卷 / 1-4期

关键词：

D O I：

10.1080/00337578208222840

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：197 / 204

页数：8

共 11 条

[1] EFFECT OF CW-LASER IRRADIATION OF EVAPORATED LAYERS ON SILICON [J].

BHATTACHARYA, PK ;

WAGH, AG ;

KANSARA, MJ ;

SRIKANTIAH, RV .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 191 (1-3) :47-50

[2]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P11

[3] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

GAT, A ;

GERZBERG, L ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

[4] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].

GEIS, MW ;

FLANDERS, DC ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[5] LASER-HEATING AND MELTING OF THIN-FILMS ON LOW-CONDUCTIVITY SUBSTRATES [J].

GHEZ, RA ;

LAFF, RA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2103-2110

[6]

KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[7] TEMPERATURE RISE INDUCED BY A LASER-BEAM [J].

LAX, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3919-3924

[8]

LAX M, 1978, APPL PHYS LETT, V33, P788

[9] TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER-BEAM [J].

NISSIM, YI ;

LIETOILA, A ;

GOLD, RB ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :274-279

[10]

OLVER FWJ, 1965, HDB MATH FUNCTIONS, P369

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