THE DEPENDENCE OF SURFACE-MORPHOLOGY OF GASB-EPITAXIAL AND ALXGA1-XSB-EPITAXIAL LAYERS ON THE CONDITIONS OF LPE GROWTH

被引:1
作者
YORDANOVA, IM
PRAMATAROVA, LD
机构
[1] BULGARIAN ACAD SCI,INST SOLID STATE PHYS,BLVD LENIN 72,BU-1113 SOFIA,BULGARIA
[2] HIGHER ELECTROENGN INST,VARNA,BULGARIA
关键词
D O I
10.1002/crat.2170180620
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:835 / 841
页数:7
相关论文
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KAGAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) :2061-2062
[3]  
SASAKI A, 1978, ED785, P33
[4]   HIGHLY EFFICIENT PGASB-NGA1-XALXSB PHOTO-DIODES [J].
SUKEGAWA, T ;
HIRAGUCHI, T ;
TANAKA, A ;
HAGINO, M .
APPLIED PHYSICS LETTERS, 1978, 32 (06) :376-378
[5]  
YORDANOVA I, 1981, CRYST RES TECHNOL, V16, pK46