SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM

[11] DOREMUS RH, 1958, GROWTH PERFECTION ED, P411

[12] DOREMUS RH, 1958, GROWTH PERFECTION ED, P319

[13] Frank F. C., 1958, GROWTH PERFECTION CR, P411

[14] THE INFLUENCE OF DISLOCATIONS ON CRYSTAL GROWTH [J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1949, (05): : 48 - 54

[15] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2208 - 2218

[16] OXYGEN STICKING COEFFICIENTS ON CLEAN SEMICONDUCTOR SURFACES [J]. SURFACE SCIENCE, 1965, 3 (04) : 419 - &

[17] NUCLEATION OF CRYSTALS IN MULTILAYER METALLIC ADSORBATES [J]. APPLIED PHYSICS LETTERS, 1967, 11 (02) : 67 - &

[18] HALE AP, 1963, VACUUM, V13, P93

[19] EVAPORATION OF METAL CRYSTALS [J]. JOURNAL OF CHEMICAL PHYSICS, 1957, 26 (05) : 1216 - 1224

[20] HIRTH JP, 1963, CONDENSATION EVAPORA, V11, P87

[11] DOREMUS RH, 1958, GROWTH PERFECTION ED, P411

[12] DOREMUS RH, 1958, GROWTH PERFECTION ED, P319

[13] Frank F. C., 1958, GROWTH PERFECTION CR, P411

[14] THE INFLUENCE OF DISLOCATIONS ON CRYSTAL GROWTH [J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1949, (05): : 48 - 54

[15] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2208 - 2218

[16] OXYGEN STICKING COEFFICIENTS ON CLEAN SEMICONDUCTOR SURFACES [J]. SURFACE SCIENCE, 1965, 3 (04) : 419 - &

[17] NUCLEATION OF CRYSTALS IN MULTILAYER METALLIC ADSORBATES [J]. APPLIED PHYSICS LETTERS, 1967, 11 (02) : 67 - &

[18] HALE AP, 1963, VACUUM, V13, P93

[19] EVAPORATION OF METAL CRYSTALS [J]. JOURNAL OF CHEMICAL PHYSICS, 1957, 26 (05) : 1216 - 1224

[20] HIRTH JP, 1963, CONDENSATION EVAPORA, V11, P87