HIGH-CURRENT, LOW-FORWARD-DROP JBS POWER RECTIFIERS

被引:7
作者
CHANG, HR
BALIGA, BJ
机构
关键词
D O I
10.1016/0038-1101(86)90215-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:359 / 363
页数:5
相关论文
共 7 条
[1]   THE PINCH RECTIFIER - A LOW-FORWARD-DROP HIGH-SPEED POWER DIODE [J].
BALIGA, BJ .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :194-196
[2]   COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS [J].
BALIGA, BJ ;
SUN, E .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) :685-688
[3]  
BALIGA BJ, 1981, SILICON INTEGRAT B S, V2
[4]  
DENDA S, 1977, Patent No. 24465
[5]  
SCHIMUZU Y, 1984, IEEE T ELECTRON DEV, V31, P1314
[6]   CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J].
SHANNON, JM .
SOLID-STATE ELECTRONICS, 1976, 19 (06) :537-543
[7]   SCHOTTKY DIODES WITH HIGH BREAKDOWN VOLTAGES [J].
WILAMOWSKI, BM .
SOLID-STATE ELECTRONICS, 1983, 26 (05) :491-493