A SUBSTRATE DOPING VARIATION STUDY OF THE PINNING STATES AT METAL GAAS(110) INTERFACES

被引：10

作者：

MIYANO, KE

CAO, R

KENDELEWICZ, T

SPINDT, CJ

MAHOWALD, PH

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1403 / 1408

页数：6

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