WAVES IN ELASTIC SEMICONDUCTORS IN A BIAS ELECTRIC-FIELD

被引:5
作者
DAHER, N [1 ]
MAUGIN, GA [1 ]
机构
[1] UNIV PARIS 06,CNRS,MECAN THEOR LAB,TOUR 66 4 PL JUSSIEU,F-75230 PARIS 05,FRANCE
关键词
ELASTICITY;
D O I
10.1016/0020-7225(86)90107-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Certain aspects of bulk and surface wave propagation are studied in elastic semiconductors on the basis of a previously given phenomenological, nonlinear, rotationally invariant, thermodynamically admissible theory of deformable semiconductors. Special attention is devoted to the coupling of bulk elastic and charge waves for both longitudinal and orthogonal settings of the bias field and to alterations brought by conduction and induced electromechanical couplings on surface modes when the bias field is set orthogonal to the sagittal plane. The study is analytical, using small characteristic parameters to study complex couplings when necessary. Numerical estimates, however, allow one to judge of the relative influence of conduction as compared to the more usual dielectric case.
引用
收藏
页码:733 / 754
页数:22
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