HIGH-POWER V-BAND ALINAS/GAINAS ON INP HEMTS

被引：14

作者：

MATLOUBIAN, M

BROWN, AS

NGUYEN, LD

MELENDES, MA

LARSON, LE

DELANEY, MJ

PENCE, JE

RHODES, RA

THOMPSON, MA

HENIGE, JA

机构：

[1] Hughes Research Laboratories, Malibu

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 04期

关键词：

D O I：

10.1109/55.215155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the dc and RF performance of delta-doped channel AlInAs/GaInAs on InP power HEMT's. A 450-mum-wide device with a gate length of 0.22 mum has achieved an output power of 150 mW (at the 1-dB gain compression point) with power-added efficiency of 20% at 57 GHz. The device has a saturated output power of 200 mW with power-added efficiency of 17%. This is the highest output power measured from a single InP-based HEMT at this frequency, and demonstrates the feasibility of these HEMT's for high-power applications in addition to low-noise applications at V band.

引用

页码：188 / 189

页数：2

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