TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE FOR THE MOCVD GROWTH OF LOW-THRESHOLD 1.55-MU-M INXGA1-XAS/INP QUANTUM-WELL LASERS

被引：21

作者：

HEIMBUCH, ME ^{[1
]}

HOLMES, AL ^{[1
]}

REAVES, CM ^{[1
]}

MACK, MP ^{[1
]}

DENBAARS, SP ^{[1
]}

COLDREN, LA ^{[1
]}

机构：

[1] UNIV CALIF SAN FRANCISCO,DEPT MAT,SAN FRANCISCO,CA 94143

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 02期

关键词：

BROAD-AREA LASERS; INGAAS/INP; QUANTUM WELLS;

D O I：

10.1007/BF02655251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tertiarybutylarsine (TBA) and teriarybutylphosphine (TBP) are liquid organometallic sources that are a safer alternative to arsine and phosphine. In this work, we have grown high-quality In0.53Ga0.47As/InP quantum wells at a temperature of 590-degrees with TBA and TBP partial pressures of 0.4 and 2.5 Torr, respectively. A low-temperature photoluminescence study indicated optimized column V growth interruption times of 0.5 s for In0.53Ga0.47As wells with InP barriers. Using the optimized growth conditions, we have obtained lattice matched In0.53Ga0.47As/InxGa1-xAsyP1-y single quantum-well lasers emitting at 1.55 mum. Broad-area devices with a length of 3.5 mm exhibit a low threshold current density of 220A/cm2. Broad-area lasers containing four quantum wells had a threshold current density of 300A/cm2 for a 3.0 mm cavity length and CW powers of 40 mW per facet for an as-cleaved 4 x 750 mum device.

引用

页码：87 / 91

页数：5

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