PREPARATION OF TEM PLAN-VIEW AND CROSS-SECTIONAL SPECIMENS OF ZNSE/GAAS EPILAYERS BY CHEMICAL THINNING AND ARGON ION MILLING

被引：14

作者：

WANG, N ^{[1
]}

FUNG, KK ^{[1
]}

机构：

[1] HONG KONG UNIV SCI & TECHNOL,DEPT PHYS,KOWLOON,HONG KONG

来源：

ULTRAMICROSCOPY | 1995年 / 60卷 / 03期

关键词：

D O I：

10.1016/0304-3991(95)00076-3

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Clean and even millimetre-size electron-transparent plan-view specimens of ZnSe/GaAs with and without the GaAs substrate completing with a lift-off method for GaAs epilayers have been prepared by chemical thinning with a 5:1 (NaOH:H2O2) solution. Cross-sectional specimens of ZnSe/GaAs with very little ion-induced damages and extensive thin area suitable for HREM imaging have been prepared by argon ion milling. Ion-induced damage in ZnSe has virtually been eliminated by progressively decreasing ion voltages to 0.7 kV. Large thin areas result from the glue line of the cross-sectional specimen being shadowed by the GaAs substrate in off-centre single-side ion milling.

引用

页码：427 / 435

页数：9

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