GENERATION-RECOMBINATION NOISE OF HOT CARRIERS IN SEMICONDUCTORS

被引：5

作者：

REGGIANI, L

LUGLI, P

MITIN, V

机构：

[1] UNIV MODENA,CTR INTERUNIV STRUTTURA MAT,I-41100 MODENA,ITALY

[2] ACAD SCI UKSSR,INST SEMICOND,KIEV,UKRAINE,USSR

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期

关键词：

D O I：

10.1016/0038-1101(88)90337-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：543 / 546

页数：4

共 12 条

[1]

ABAKUMOV VN, 1978, SOV PHYS SEMICOND+, V12, P1

[2] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

JACOBONI, C ;

REGGIANI, L .

REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705

[3]

LUGLI P, 1986, 8TH P INT C NOIS PHY, P235

[4] RECOMBINATION AND IMPACT-IONIZATION PECULIARITIES IN MANY-VALLEY SEMICONDUCTORS [J].

MITIN, VV ;

ASCHE, M ;

KOSTIAL, H .

PHYSICAL REVIEW B, 1986, 33 (06) :4100-4107

[5]

Nougier J. P., 1981, Sixth International Conference on Noise in Physical Systems (NBS-SP-614), P397

[6] ONE MODEL OF FLICKER, BURST, AND GENERATION-RECOMBINATION NOISES [J].

PELLEGRINI, B .

PHYSICAL REVIEW B, 1981, 24 (12) :7071-7083

[7] ELECTRIC CHARGE MOTION, INDUCED CURRENT, ENERGY-BALANCE, AND NOISE [J].

PELLEGRINI, B .

PHYSICAL REVIEW B, 1986, 34 (08) :5921-5924

[8] DIFFUSION-COEFFICIENT OF HOLES IN SILICON BY MONTE-CARLO SIMULATION [J].

REGGIANI, L ;

BRUNETTI, R ;

NORMANTAS, E .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1212-1215

[9]

SHOCKLEY W, 1960, QUANTUM THEORY ATOM

[10]

VAISSIERE JC, 1986, THESIS U MONTPELLIER

← 1 2 →