THE EFFECTS OF HEAVY IMPURITY DOPING ON ALGAAS/GAAS BIPOLAR-TRANSISTORS

被引：29

作者：

KLAUSMEIERBROWN, ME ^{[1
]}

LUNDSTROM, MS ^{[1
]}

MELLOCH, MR ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES INST,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2146 / 2155

页数：10

相关论文

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[8] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS
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[9] EVIDENCE FOR BAND-GAP NARROWING EFFECTS IN BE-DOPED, P-P+ GAAS HOMOJUNCTION BARRIERS
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