LARGE-SIGNAL DESIGN OF GAAS-FET OSCILLATORS USING INPUT DIELECTRIC RESONATORS

被引：7

作者：

PODCAMENI, A ^{[1
]}

BERMUDEZ, LA ^{[1
]}

机构：

[1] UNIV BRASILIA,DEPT ENGN ELETR,BR-70910 BRASILIA,DF,BRAZIL

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1983年 / 31卷 / 04期

关键词：

D O I：

10.1109/TMTT.1983.1131498

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：358 / 361

页数：4

共 17 条

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[3]

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[4] LARGE-SIGNAL GAAS MESFET OSCILLATOR DESIGN [J].

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[5]

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[6] RESONANT FREQUENCY OF A TE-OIDELTA DEGREES DIELECTRIC RESONATOR [J].

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[7]

KROWNE CM, 1977, ELECTRON LETT, V13, P114

[8] SOME BASIC CHARACTERISTICS OF BROADBAND NEGATIVE RESISTANCE OSCILLATOR CIRCUITS [J].

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[9] DESIGN OF GAAS MESFET OSCILLATOR USING LARGE-SIGNAL S-PARAMETERS [J].

MITSUI, Y ;

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[10]

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