DESIGN OF GAAS MESFET OSCILLATOR USING LARGE-SIGNAL S-PARAMETERS

被引：17

作者：

MITSUI, Y

NAKATANI, M

MITSUI, S

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1977年 / 25卷 / 12期

关键词：

D O I：

10.1109/TMTT.1977.1129260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：981 / 984

页数：4

共 11 条

[1]

ABE H, 1976, IEEE INT SOLID STATE, P164

[2] SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

BAECHTOLD, W ;

DAETWYLE.K ;

FORSTER, T ;

MOHR, TO ;

WALTER, W ;

WOLF, P .

ELECTRONICS LETTERS, 1973, 9 (10) :232-234

[3]

BODWAY GE, 1967, MICROWAVE J, V10

[4] GAAS MICROWAVE-POWER FET [J].

FUKUTA, M ;

SUYAMA, K ;

SUZUKI, H ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :388-394

[5] RF AMPLIFIER DESIGN WITH LARGE-SIGNAL S-PARAMETERS [J].

LEIGHTON, WH ;

CHAFFIN, RJ ;

WEBB, JG .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (12) :809-815

[6] DEPENDENCE OF GAAS POWER MESFET MICROWAVE PERFORMANCE ON DEVICE AND MATERIAL PARAMETERS [J].

MACKSEY, HM ;

ADAMS, RL ;

MCQUIDDY, DN ;

SHAW, DW ;

WISSEMAN, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :113-122

[7]

MAEDA M, 1975, IEEE T MICROWAVE THE, V23

[8] SUBMICRON SINGLE-GATE AND DUAL-GATE GAAS MESFETS WITH IMPROVED LOW-NOISE AND HIGH-GAIN PERFORMANCE [J].

OGAWA, M ;

OHATA, K ;

FURUTSUKA, T ;

KAWAMURA, N .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :300-305

[9] PERFORMANCE OF GAAS MESFET OSCILLATORS IN FREQUENCY-RANGE 8-25 GHZ [J].

TSERNG, HQ ;

MACKSEY, HM ;

SOKOLOV, V .

ELECTRONICS LETTERS, 1977, 13 (03) :85-86

[10]

VENDELIN GD, 1975, MICROWAVES JUN, P58

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