ELECTRONIC-STRUCTURE AND BOUND EXCITONS FOR DEFECTS IN SEMICONDUCTORS FROM OPTICAL SPECTROSCOPY

被引:15
作者
MONEMAR, BAI
机构
来源
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1988年 / 15卷 / 02期
关键词
D O I
10.1080/10408438808243736
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:111 / 151
页数:41
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共 129 条
[1]   CORE EFFECTS ON BOUND-EXCITON-NEUTRAL-IMPURITY COMPLEXES WITH PARTICULAR REFERENCE TO TRANSITION-METAL IMPURITIES [J].
ALLEN, JW ;
DEAN, PJ ;
WHITE, AM .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (05) :L113-L116
[2]   IONIZATION OF LOW DONOR LEVELS AND RECOMBINATION OF HOT-ELECTRONS IN N-SI AT LOW-TEMPERATURES [J].
ASCHE, M ;
KOSTIAL, H ;
SARBEY, OG .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 91 (02) :521-530
[3]   DEEP-LEVEL TRANSIENT SPECTROSCOPY AND PHOTOLUMINESCENCE STUDIES OF ELECTRON-IRRADIATED CZOCHRALSKI SILICON [J].
AWADELKARIM, OO ;
WEMAN, H ;
SVENSSON, BG ;
LINDSTROM, JL .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :1974-1980
[4]   ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS [J].
BASSANI, F ;
IADONISI, G ;
PREZIOSI, B .
REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) :1099-1210
[5]   LOCALIZED ELECTRON-STATES IN SEMICONDUCTORS [J].
BATES, CA ;
STEVENS, KWH .
REPORTS ON PROGRESS IN PHYSICS, 1986, 49 (07) :783-823
[6]  
Bell R. J., 1972, INTRO FOURIER TRANSF
[7]   QUASI-DIRECT RADIATIVE RECOMBINATION OF FREE HOLES AT NEUTRAL SHALLOW DONORS IN GAP [J].
BINDEMANN, R ;
SCHWABE, R ;
HANSEL, T .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 87 (01) :169-177
[8]  
BIR GL, 1962, J PHYS CHEM SOLIDS, V24, P1467
[9]   OPTICALLY DETECTED MAGNETIC-RESONANCE STUDY OF LOW SYMMETRY ACCEPTORS IN ZNTE CRYSTALS [J].
BITTEBIERRE, J ;
COX, RT ;
SAMINADAYAR, K .
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :332-335
[10]   IMPACT IONIZATION OF EXCITONS IN GAAS [J].
BLUDAU, W ;
WAGNER, E .
PHYSICAL REVIEW B, 1976, 13 (12) :5410-5414