SPATIAL-RESOLUTION AND NATURE OF DEFECTS PRODUCED BY LOW-ENERGY PROTON IRRADIATION OF GAAS SOLAR-CELLS

被引：4

作者：

KACHARE, R

ANSPAUGH, BE

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 21期

关键词：

D O I：

10.1063/1.97302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1459 / 1461

页数：3

共 13 条

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[10] POINT-DEFECTS AND DISLOCATION CLIMB IN III-V COMPOUNDS SEMICONDUCTORS [J].

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