POINT-DEFECTS AND DISLOCATION CLIMB IN III-V COMPOUNDS SEMICONDUCTORS

被引：11

作者：

PETROFF, PM

机构：

来源：

JOURNAL DE PHYSIQUE | 1979年 / 40卷

关键词：

D O I：

10.1051/jphyscol:1979640

中图分类号：

学科分类号：

摘要：

引用

页码：201 / 205

页数：5

共 21 条

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CARTER, CB ;

RAY, ILF .

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[2]

CARTER CB, 1978, ELECTRON MICROSCOPY, V1, P324

[3]

FRIEDEL J, 1964, DISLOCATIONS, P105

[4] DISSOCIATION OF DISLOCATIONS IN GAP [J].

GAI, PL ;

HOWIE, A .

PHILOSOPHICAL MAGAZINE, 1974, 30 (04) :939-943

[5] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS [J].

GOTTSCHALK, H ;

PATZER, G ;

ALEXANDER, H .

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[6] DEFECT STRUCTURE OF DEGRADED GAALAS-GAAS DOUBLE HETEROJUNCTION LASERS [J].

HUTCHINSON, PW ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1975, 32 (04) :745-754

[7]

HUTCHINSON PW, 1975, APPL PHYS LETT, V26, P251

[8] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J].

LANG, DV ;

KIMERLING, LC .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :489-492

[9] OBSERVATION OF ATHERMAL DEFECT ANNEALING IN GAP [J].

LANG, DV ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :248-250

[10] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

LANG, DV ;

LOGAN, RA .

PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

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