LIQUID-PHASE EPITAXIAL-GROWTH GAXIN1-XP

被引：11

作者：

MARIETTE, H ^{[1
]}

BOURNEIX, J ^{[1
]}

MARBEUF, A ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDES LAB,F-92190 BELLEVUE,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1976年 / 11卷 / 04期

关键词：

D O I：

10.1051/rphysap:01976001104047500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：475 / 481

页数：7

共 23 条

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[3] ARCHER RJ, 1972, J ELECTRON MATER, V1, P128
[4] CHEVALLIER J, 1974, J PHYSIQUE COLLOQ, V35, pC3
[5] FOSTER LM, 1972, J ELECTROCHEM SO SPR
[6] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP
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HOLONYAK, N
LEE, MH
CAMPBELL, JC
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 154 - 165
[7] KAJIYAMA K, 1971, JAPAN J APPL PHYS, V10, P5
[8] LUMINESCENCE FROM IN0.5GA0.5P PREPARED BY VAPOR-PHASE EPITAXY
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NUESE, CJ
LADANY, I
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3266 - 3272
[9] SOLUTION GROWTH OF HOMOGENEOUS GAXIN1-XP ALLOYS
LAUGIER, A
CHEVALLIER, J
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (02): : 427 - +
[10] DIRECT-INDIRECT TRANSITION IN IN1-XGAXP
LEE, MH
HOLONYAK, N
HITCHENS, WR
CAMPBELL, JC
ALTARELLI, M
[J]. SOLID STATE COMMUNICATIONS, 1974, 15 (06) : 981 - 985