DIRECT-INDIRECT TRANSITION IN IN1-XGAXP

[1] ALTARELLI M, TO BE PUBLISHED

[2] LUMINESCENCE, LASER, AND CARRIER-LIFETIME BEHAVIOR OF CONSTANT-TEMPERATURE LPE IN1-XGAXP (CHI=0.52) GROWN ON (100)GAAS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (07) : 327 - 330

[3] PHOTOLUMINESCENCE OF UNDOPED GAXIN1-XP ALLOYS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (02): : 437 - +

[4] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4075 - &

[5] GROVES WO, PRIVATE COMMUNICATIO

[6] BAND STRUCTURE OF INGAP FROM PRESSURE EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) : 5291 - &

[7] HILSUM C, 1968, 9 P INT C PHYS SEM, P1214

[8] HITCHENS WR, TO BE PUBLISHED

[9] STIMULATED EMISSION IN AN INDIRECT SEMICONDUCTOR - N ISOELECTRONIC TRAP-ASSISTED RECOMBINATION IN GAAS1-XPX,X GREATER THAN 0.44) [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 256 - &

[10] PHOTOEXCITED RESONANCE-ENHANCED NITROGEN-TRAP GAAS1-XP X-N LASER [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 379 - 383

[1] ALTARELLI M, TO BE PUBLISHED

[2] LUMINESCENCE, LASER, AND CARRIER-LIFETIME BEHAVIOR OF CONSTANT-TEMPERATURE LPE IN1-XGAXP (CHI=0.52) GROWN ON (100)GAAS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (07) : 327 - 330

[3] PHOTOLUMINESCENCE OF UNDOPED GAXIN1-XP ALLOYS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (02): : 437 - +

[4] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4075 - &

[5] GROVES WO, PRIVATE COMMUNICATIO

[6] BAND STRUCTURE OF INGAP FROM PRESSURE EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) : 5291 - &

[7] HILSUM C, 1968, 9 P INT C PHYS SEM, P1214

[8] HITCHENS WR, TO BE PUBLISHED

[9] STIMULATED EMISSION IN AN INDIRECT SEMICONDUCTOR - N ISOELECTRONIC TRAP-ASSISTED RECOMBINATION IN GAAS1-XPX,X GREATER THAN 0.44) [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 256 - &

[10] PHOTOEXCITED RESONANCE-ENHANCED NITROGEN-TRAP GAAS1-XP X-N LASER [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 379 - 383