A METHOD FOR MEASUREMENT OF MULTIPLE LIGHT SPOT POSITIONS ON ONE POSITION-SENSITIVE DETECTOR (PSD)

被引:36
作者
QIAN, DH
WANG, WJ
BUSCHVISHNIAC, IJ
BUCKMAN, AB
机构
[1] Department of Mechanical Engineering, University of Texas at Austin, Austin
关键词
D O I
10.1109/19.206672
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new method for measurement of the positions of multiple light beams irradiating a single two-dimensional lateral-effect position-sensitive detector (PSD) has been developed. The measurement method relies on using light sources, each of which is modulated at different frequencies and then demodulated in the sensor signal-processing circuit using a pulse amplitude modulation (PAM) scheme. The position of each light spot can be determined even if there are other beams irradiating the PSD at the same time. In a very simple experiment, the light beams from two LED's were projected onto one PSD, with one LED modulated at 10 kHz and the other at 5 kHz. The PSD was calibrated by scanning the light beams across the PSD in equidistant grid lines over a 4 mm x 7.2 mm area. It was found that the resolution, linearity, and accuracy of the measurement are not affected even if multiple light beams are continuously present. The number of light beams which can be used simultaneously is limited only by the bandwidth of the PSD and the sampling time of the sample/hold devices used in the dc restoration circuit. Utilization of this simple technique can potentially make the design of a complicated sensing system very simple and compact, with lower system cost, easier alignment, and higher precision.
引用
收藏
页码:14 / 18
页数:5
相关论文
共 11 条
[1]  
ALLEN DA, 1962, IRE T ELECTRON DEV, VED9, P411
[2]   LATERAL PHOTODETECTOR OPERATING IN FULLY REVERSE-BIASED MODE [J].
CONNORS, WP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (08) :591-&
[3]  
KAWASAKI A, 1990, SENSOR ACTUAT A-PHYS, V21, P534
[4]  
Lee T. P., 1988, OPTICAL FIBER TELECO, V2
[5]   PHOTOEFFECTS IN NONUNIFORMLY IRRADIATED P-N JUNCTIONS [J].
LUCOVSKY, G .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) :1088-1095
[6]   A NEW SEMICONDUCTOR PHOTOCELL USING LATERAL PHOTOEFFECT [J].
WALLMARK, JT .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (04) :474-483
[7]   THE LINEARITY AND SENSITIVITY OF LATERAL EFFECT POSITION-SENSITIVE DEVICES - AN IMPROVED GEOMETRY [J].
WANG, WJ ;
BUSCHVISHNIAC, IJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) :2475-2480
[8]   SINGLE-AXIS AND DUAL-AXIS LATERAL PHOTODETECTORS OF RECTANGULAR SHAPE [J].
WOLTRING, HJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) :581-590
[9]   NEW STRUCTURE OF 2-DIMENSIONAL POSITION-SENSITIVE SEMICONDUCTOR DETECTOR AND APPLICATION [J].
YAMAMOTO, K ;
YAMAGUCHI, S ;
TERADA, Y .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (01) :438-442
[10]  
1989, LASER DIODES PRODUCT