PROTON ISOLATION FOR GAAS INTEGRATED-CIRCUITS

[1] BOCCONGIBOD D, 1980, NOV IEEE GAAS IC S

[2] CHANG CC, 1982, UNPUB IEEE MTT S S

[3] DAVANZO D, 1981, OCT IEEE GAAS IC S

[4] MULTIPLE-ENERGY PROTON-BOMBARDMENT IN N+-GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 183 - 189

[5] Drukier I., 1979, 17th Annual Proceedings Reliability Physics, P150, DOI 10.1109/IRPS.1979.362885

[6] OPTICAL AND ELECTRICAL PROPERTIES OF PROTON-BOMBARDED P-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 207 - 213

[7] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 419 - 426

[8] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &

[9] HOWER PL, 1968, 1965 P INT S GALL AR, P187

[10] ITOK T, 1980, IEEE T ELECTRON DEVI, V27, P1037

[1] BOCCONGIBOD D, 1980, NOV IEEE GAAS IC S

[2] CHANG CC, 1982, UNPUB IEEE MTT S S

[3] DAVANZO D, 1981, OCT IEEE GAAS IC S

[4] MULTIPLE-ENERGY PROTON-BOMBARDMENT IN N+-GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 183 - 189

[5] Drukier I., 1979, 17th Annual Proceedings Reliability Physics, P150, DOI 10.1109/IRPS.1979.362885

[6] OPTICAL AND ELECTRICAL PROPERTIES OF PROTON-BOMBARDED P-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 207 - 213

[7] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 419 - 426

[8] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &

[9] HOWER PL, 1968, 1965 P INT S GALL AR, P187

[10] ITOK T, 1980, IEEE T ELECTRON DEVI, V27, P1037