DISPLACEMENTS PARALLEL TO THE SURFACE OF RECONSTRUCTED GAAS(110)

被引：18

作者：

DUKE, CB

PATON, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582818

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：327 / 331

页数：5

共 11 条

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[2] STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS
DUKE, CB
MEYER, RJ
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YEH, JL
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[3] DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM GAP(110)
DUKE, CB
PATON, A
FORD, WK
KAHN, A
CARELLI, J
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 562 - 573
[4] THE ATOMIC GEOMETRY OF GAAS(110) REVISITED
DUKE, CB
RICHARDSON, SL
PATON, A
KAHN, A
[J]. SURFACE SCIENCE, 1983, 127 (02) : L135 - L143
[5] GROSSMAN HJ, 1984, J VAC SCI TECHNOL B, V2
[6] GROSSMANN HJ, 1984, SURF SCI, V139, P239
[7] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110)
LUBINSKY, AR
DUKE, CB
LEE, BW
MARK, P
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (17) : 1058 - 1061
[8] ATOMIC GEOMETRIES OF ZNSE(110) AND GAAS(110) - DETERMINATION BY PHOTOEMISSION SPECTROSCOPY
MAILHIOT, C
DUKE, CB
CHANG, YC
[J]. PHYSICAL REVIEW B, 1984, 30 (02): : 1109 - 1111
[9] DYNAMICAL CALCULATION OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110) - INFLUENCE OF BOUNDARY-CONDITIONS, EXCHANGE POTENTIAL, LATTICE-VIBRATIONS, AND MULTILAYER RECONSTRUCTIONS
MEYER, RJ
DUKE, CB
PATON, A
KAHN, A
SO, E
YEH, JL
MARK, P
[J]. PHYSICAL REVIEW B, 1979, 19 (10) : 5194 - 5205
[10] THE GEOMETRIC STRUCTURES OF THE GAAS(111) AND (110) SURFACES
TONG, SY
MEI, WN
XU, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 393 - 398