A STUDY OF ELECTRONIC STATES IN A-SIOX AND A-SINX THIN-FILMS BY INFRARED, AUGER-ELECTRON AND X-RAY PHOTOELECTRON SPECTROSCOPIES

被引：19

作者：

CHAO, SS ^{[1
]}

LUCOVSKY, G ^{[1
]}

LIN, SY ^{[1
]}

WONG, CK ^{[1
]}

RICHARD, PD ^{[1
]}

TSU, DV ^{[1
]}

TAKAGI, Y ^{[1
]}

KEEM, JE ^{[1
]}

TYLER, JE ^{[1
]}

PAI, P ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

关键词：

AMORPHOUS SILICON NITRIDE THIN FILMS - AMORPHOUS SILICON OXIDE THIN FILMS - ELECTRONIC STATES - VALENCE BAND STRUCTURE;

D O I：

10.1016/0022-3093(85)90813-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(Edited Abstract)

引用

页码：929 / 932

页数：4

共 8 条

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LUCOVSKY, G
LIN, SY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1122 - 1128
[5] Philipp H. R., 1972, J NONCRYST SOLIDS, V8, P627
[6] RAMAKER DE, 1978, PHYSICS SIO2 ITS INT, P99
[7] REMOTE PLASMA ENHANCED CVD DEPOSITION OF SILICON-NITRIDE AND OXIDE FOR GATE INSULATORS IN (INDIUM, GA)AS FET DEVICES
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MARKUNAS, RJ
LUCOVSKY, G
FOUNTAIN, GG
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TSU, DV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 867 - 872
[8] THEORY OF KLL AUGER ENERGIES INCLUDING STATIC RELAXATION
SHIRLEY, DA
[J]. PHYSICAL REVIEW A, 1973, 7 (05): : 1520 - 1528