HEAT-CONDUCTION IN SILICON THIN-FILMS - EFFECT OF MICROSTRUCTURE

被引：40

作者：

WEI, LH ^{[1
]}

VAUDIN, M ^{[1
]}

HWANG, CS ^{[1
]}

WHITE, G ^{[1
]}

XU, J ^{[1
]}

STECKL, AJ ^{[1
]}

机构：

[1] UNIV CINCINNATI,NANELECTR LAB,CINCINNATI,OH 45221

来源：

JOURNAL OF MATERIALS RESEARCH | 1995年 / 10卷 / 08期

关键词：

D O I：

10.1557/JMR.1995.1889

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study was made of the thermal properties of low pressure chemical vapor deposition (LPCVD) silicon thin films with amorphous and polycrystalline microstructures, produced by varying the substrate temperature. Thermal diffusivity measurements were conducted using a thermal wave technique. The thermal diffusivity of the polycrystalline films was found to be about three times that of the amorphous films, but about one eighth that of bulk silicon single crystals. There was also an indication that the diffusivity increased with deposition temperature above the transition temperature from the amorphous to the polycrystalline state, The relationships between the thermal properties and microstructural features, such as grain size and grain boundary, are discussed.

引用

页码：1889 / 1896

页数：8

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