CHARACTERIZATION OF ULTRATHIN CAF2 FILMS HETEROEPITAXIALLY GROWN ON SI(111) SURFACES

被引：4

作者：

ANDO, K

SAIKI, K

SATO, Y

KOMA, A

ASANO, T

ISHIWARA, H

FURUKAWA, S

机构：

[1] UNIV TOKYO,DEPT CHEM,BUNKYO KU,TOKYO 113,JAPAN

[2] TOKYO INST TECHNOL,GRAD SCH SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 02期

关键词：

D O I：

10.1143/JJAP.27.L170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L170 / L172

页数：3

共 10 条

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[7] INSITU OBSERVATION OF DEFECT FORMATION IN CAF2(111) SURFACES INDUCED BY LOW-ENERGY ELECTRON-BOMBARDMENT [J].

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[8] LOW-ENERGY ELECTRON-ENERGY LOSS SPECTROSCOPY ON CAF2(111) SURFACES [J].

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[10]

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