AN OXYGEN SENSITIVE ZNO-SIO2-AU DEVICE USING PHOTODESORPTION OF OXYGEN

被引：4

作者：

KOBAYASHI, K ^{[1
]}

OKADA, G ^{[1
]}

SHIMIZU, M ^{[1
]}

OKAMOTO, S ^{[1
]}

机构：

[1] TECH UNIV NAGAOKA, FAC ENGN, DEPT ELECT ENGN, NAGAOKA 94021, JAPAN

来源：

JOURNAL OF MATERIALS SCIENCE | 1990年 / 25卷 / 06期

关键词：

Oxygen;

D O I：

10.1007/BF00584911

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A significant breakdown of the rectification characteristic of the ZnO-Si02-Au device occurs with UV irradiation and is enhanced with increasing light intensity and a reverse bias voltage at which the device is kept under UV irradiation. Complex impedance plots of the device reveal that an increase in leakage current observed after UV irradiation is mainly due to a decrease in the barrier height. The magnitude of breakdown and recovery of the rectification characteristic is dependent on the ambient partial pressure of oxygen. The variation of the barrier height is explained by oxygen desorption under UV illumination and by oxygen adsorption in the dark. © 1990 Chapman and Hall Ltd.

引用

页码：2958 / 2962

页数：5

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