NEW NEGATIVE-RESISTANCE REGIME OF HETEROSTRUCTURE INSULATED GATE TRANSISTOR (HIGFET) OPERATION

被引：30

作者：

SHUR, MS ^{[1
]}

ARCH, DK ^{[1
]}

DANIELS, RR ^{[1
]}

ABROKWAH, JK ^{[1
]}

机构：

[1] HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420

来源：

关键词：

D O I：

10.1109/EDL.1986.26300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：78 / 80

页数：3

共 8 条

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[3] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER
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MORKOC, H
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GOSSARD, AC
CHAN, WK
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KASTALSKY, A
LURYI, S
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 334 - 336
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