ANNEALING OF UNDOPED INP AND THE EVALUATION BY PHOTOLUMINESCENCE

被引：21

作者：

INOUE, T ^{[1
]}

SHIMAKURA, H ^{[1
]}

KAINOSHO, K ^{[1
]}

HIRANO, R ^{[1
]}

ODA, O ^{[1
]}

机构：

[1] NIPPON MIN CO LTD,DEPT SEMICOND MAT,TODA,SAITAMA 335,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 04期

关键词：

D O I：

10.1149/1.2086649

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Undoped InP single crystals grown by the LEC technique have been annealed at temperatures between 520°–820°C for 5h and their electrical properties and the photoluminescence spectra have been evaluated. It was found that the carrier concentration can be decreased up to 3 × 1014 cm−3 by annealing at 620°C and the photoluminescence spectra are largely changed by annealing. When the annealing temperature is increased to higher than 720°C, the free exciton peak appears very prominently and many peaks appear at the longer wavelength region between 900 and 980 nm. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1283 / 1288

页数：6

共 29 条

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