THE 1.380-EV AND 1.360-EV PHOTOLUMINESCENCE TRANSITIONS IN UNDOPED INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

ILIADIS, AA ^{[1
]}

OVADIA, S ^{[1
]}

机构：

[1] UNIV MARYLAND,PHYS SCI LAB,COLLEGE PK,MD 20742

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.340368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5460 / 5463

页数：4

共 10 条

[1] AN INVESTIGATION OF THE 1.36 EV PHOTOLUMINESCENCE SPECTRUM OF HEAT-TREATED INP USING ZEEMAN SPECTROSCOPY AND STRAIN EFFECTS [J].

DUNCAN, KR ;

EAVES, L ;

RAMDANE, A ;

ROYS, WB ;

SKOLNICK, MS ;

DEAN, PJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (07) :1233-1245

[2] INFLUENCE OF GROWTH-CONDITIONS ON UNDOPED AND SULFUR-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

ILIADIS, A ;

PRIOR, KA ;

STANLEY, CR ;

MARTIN, T ;

DAVIES, GJ .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :213-218

[3] ELECTRICAL AND OPTICAL-PROPERTIES OF MG-DOPED, CA-DOPED, AND ZN-DOPED INP CRYSTALS GROWN BY THE SYNTHESIS, SOLUTE DIFFUSION TECHNIQUE [J].

KUBOTA, E ;

OHMORI, Y ;

SUGII, K .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3779-3784

[4] IDENTIFICATION OF THE MAJOR RESIDUAL DONOR IN UNINTENTIONALLY DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

MARTIN, T ;

STANLEY, CR ;

ILIADIS, A ;

WHITEHOUSE, CR ;

SYKES, DE .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :994-996

[5]

MOTT NF, 1974, METAL INSULATOR TRAN, P209

[6] ELECTRONIC-STRUCTURE OF A NEUTRAL PHOSPHORUS VACANCY IN GAP AND INP [J].

SRIVASTAVA, GP .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 93 (02) :761-765

[7]

TSANG WT, 1982, APPL PHYS LETT, V40, P467

[8] THE 1.36 EV RADIATIVE TRANSITION IN INP - ITS DEPENDENCE ON GROWTH-CONDITIONS IN MBE AND MOCVD MATERIAL [J].

WAKEFIELD, B ;

EAVES, L ;

PRIOR, KA ;

NELSON, AW ;

DAVIES, GJ .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (08) :L133-L136

[9] PHOTOLUMINESCENCE SPECTRUM OF BOUND EXCITONS IN INDIUM PHOSPHIDE AND GALLIUM ARSENIDE [J].

WHITE, AM ;

TAYLOR, LL ;

ASHEN, DJ ;

CLARKE, RC ;

MULLIN, JB ;

DEAN, PJ .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13) :1727-&

[10]

ZHU LD, 1985, J CRYST GROWTH, V73, P83, DOI 10.1016/0022-0248(85)90334-3

← 1 →